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Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP630 APPLICATIONSL TO-220 High Voltage High-Speed Switching. ABSOLUTE MAXIMUM RATINGS a=25ae(c) T T stg Storage Temperature----------- 55~150ae Tj PD Operating Junction Temperature ------ 150ae --- 1D G 2D D 3D S Allowable Power Dissipation c=25ae ------T (c) 72W Drain-Source Voltage ------------200V Drain-Gate Voltage (RGS=1M| -------) 500V Gate-Source Voltage ------------ 30V VDSS VDGR VGSS ID *Drain Current Tc=25ae------ --9.0A (c) - -- - * Drain current limited by maximumjunction temperature ELECTRICAL CHARACTERISTICS a=25ae(c) T Symbol Characteristics Min Typ Max Unit Test Conditions BVDSS IDSS IGSS VGS(th) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Is VSD Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Source Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn - On Delay Time Rise Time Turn - Off Delay Time 200 10 2.0 0.34 7.05 550 85 22 11 70 60 65 22 3.6 10.2 9.0 1.5 720 110 29 30 150 130 140 29 A 100 4.0 0.4 V ID=250|I ,VGS=0V A |I VDS =200V GS=0 A V nA V ? S pF pF pF nS nS nS nS nC nC nC VDS=0.8V DS S VGS =10V ID =9.0A * VGS=A , VDS =0V 30V VDS = VGS , ID =250|I A VGS=10V, ID =4.5A VDS = 40V , ID =4.5A * VDS =25V, VGS=0,f=1MHz VDD =100V, ID =9A RG= 25 |* Fall Time Total Gate Charge Gate- Source Charge Gate- Drain Charge Continuous Source Current Diode Forward Voltage A V IS =9.0A , VGS=0 *Pulse Test Pulse WidthU 300|I Duty CycleU s 2% Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP630 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP630 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP630 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP630 |
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